EE 320 Electronics I

Fall 2018

 

 

Class Schedule: 2:30 a.m. – 3:45 a.m. M/W; 08/27/17 to 12/12/17, Classroom: FDH 105

Professor: Yingtao Jiang Email: yingtao.jiang@unlv.edu, Phone: 702-895-2533

Office: TBE A214, Office Hours: 3:45 am- 5:00 am, M/W, or by appointment

 

 

Teaching Assistant: Jian Ni, Email: nij1@unlv.nevada.edu,

Phone: 712-345-6789, Office: TBE 310B, Office Hours: 7:30 am- 11:30 am, M/W

 

 

1.  Course Description

 

EE 320 is the first semester of one-year course to study engineering electronics. It covers: a) Introduction to semiconductor physics. b) Diodes and rectifiers. c)  Design and analysis of MOSFET and BJT amplifier. d) Amplifier frequency response. The textbook is Microelectronic Circuits (the seventh edition, ISBN:978-0-19-933913-6) by Sedra/Smith. Chapters 3 through 7, and chapter 10 will be covered in this course. A reference textbook is Electronic Devices (seventh edition, or newer) by Floyd. The pre-requisites for this course: CHEM 121, EE 221, PHYS 181/181L, MATH 431, and CPE 260.

 

 

 

2.  Homework

 

Homework assignments and due dates are pre-assigned for each chapter; these assignments are expected to be emailed to the grader at the beginning of the class on the due dates. No late homework will be accepted. The homework answers will be emailed back to the students on the due dates. It is recommended that each homework problem start from a new page. Homework problems turned in without the procedure to achieve the final answers will receive no credits.  

 

 

3. Exams

 

There will be two unit exams and a final exam during the semester. All exams are close-book type. However, two pages of formula sheets are allowed. A calculator is also allowed. Practice problems similar to exams will be discussed in lectures prior to the exam dates. Academic dishonesty during exams will result in a serious consequence.

 

 

4. Grading Policy

 

Homework: 10%, Exam 1: 20%, Exam 2: 30%, Final exam: 40%.  .

 

 

5.  Course Outcomes

 

After students successfully finish this course they will have abilities to

  1. Understand and identify the currents flowing through the a) semiconductor, b) diode, c) MOSFE and BJT.
  2. Understand the working of diodes, MOSFET and BJT.
  3. Do an analysis to determine the operating point of: diodes, MOSFET, and BJT for a given configuration.
  4. Analysis and design of applications of diodes for:  a) clipping and clamping, b) rectification, and c) regulation.
  5. Analysis and design of application of MOSFET and BJT for:  a) Inverters, b) general logic gates and c) logic gate realization.
  6. Design a four-network biasing circuit for a given Q-point for MOSFET and BJT.
  7. Derive the small signal voltage (SSV) gain for MOSFET and BJT.
  8. Do an analysis to determine the SSV gain for MOSFET and BJT.
  9. Design a single stage amplifier for a required gain using MOSFET and BJT
  10. Simulate all the above analysis problems using PSPICE circuit simulator.

 

6.  Course Outcomes by ABET

 

After students successfully finish this course they will gain the appropriate technical knowledge and skills with ability

 

1.  To apply mathematics through differential and integral calculus,

2.  To apply advanced mathematics such as differential equations, linear algebra, complex variables, and discrete mathematics,

3.  To apply knowledge of basic sciences,

4.  To apply knowledge of engineering,

5.  To identify, formulate, and solve engineering problems,

6.  To analyze and design complex electrical and electronic devices,

7.  To use the techniques, skills, and modern engineering tools necessary for engineering practice,

 

 

7. Students with Disabilities

 

Any student with a disability needing academic adjustments or accommodations should contact the Disability Resource Center as soon as possible to arrange for appropriate accommodations. The contact information for the Disability Resource Center is: Student Service Complex, Building A, Room 143.

 

 

8. Syllabus Change Disclaimer

 

Information contained in this syllabus, other than the grading policy, may be subject to change with an advance notice, as deemed appropriate by the professor.

 

 

Teaching Schedule

 

08/27 M: Ch. 3 Semiconductors

08/29 W: Ch. 3 Semiconductors

 

 

09/05W: Ch. 3, Semiconductors

09/10 M: Ch. 4, Diodes

09/12 W: Ch. 4, Diodes

09/17 T: Ch. 4, Diodes

09/19 M: Ch. 4, Diodes

09/24 M: Ch. 6, Bipolar Junction Transistors

09/26 W:  Exam 1, (Chapters 3 and 4)

 

 

10/01 M: Ch. 6. Bipolar Junction Transistors

10/03 W: Ch. 6, Bipolar Junction Transistors

10/08 M: Ch 6. Bipolar Junction Transistors

10/10 W: Ch 5, MOSFET, 1

10/15 M: Ch. 5, MOSFET, 2

10/17 W: Ch. 5, MOSFET, 3

10/22 M: Ch. 5, MOSFET, 4

10/24 W: Ch. 7, Transistor Amplifiers, 1

10/29 M: Exam 2, (Chapters 5 and 6)

 

10/31 W: Ch. 7, Transistor Amplifiers, 2

11/07 T: Ch. 7, Transistor Amplifiers, 3

11/14 W: Ch. 7, Transistor Amplifiers, 4

11/19 M: Ch. 7, Transistor Amplifiers, 5

11/21 W: Ch. 7, Transistor Amplifiers, 6

11/26 M: Ch. 7, Transistor Amplifiers, 7

11/28 W: Ch. 10, Frequency Response

12/03 M: Ch. 10, Frequency Response

 

12/05 W: Ch. 10, Frequency Response 12/07

12/10 or 12/12: Final Exam, (Chapter 7 and 10)

 

 

Homework Assignment

 

Homework 1, Chapter 3

1, 2, 5, 7, and 10. Due 09/05, W

 

Homework 2, Chapter 3

12, 15, 19, 21, and 25. Due 09/10, M

 

Homework 3, Chapter 4

20, 27, 36, 38, and 62. Due 09/17, M

 

Homework 4, Chapter 4

70, 72, 77, 87, and 96.  Due 09/24, M

 

Homework 5, Chapter 6

4, 7, 24, 35, and 48. Due 10/01, M

 

Homework 6, Chapter 6

51, 52, 62/d,e, 66/b, and 68. Due 10/8, M

 

Homework 7, Chapter 5

1, 9, 15, 19, and 34. Due 10/15, M

 

Homework 8, Chapter 5

45, 50, 54, 57, and 59. Due 10/29, M

 

Homework 9, Chapter 7

18, 29, 55, 68, and 82. Due 11/14, W

 

Homework 10, Chapter 7

85, 95, 120, 130, and 134. Due 11/28, W

 

Homework 11, Chapter 10

1, 2, 3, 4, and 8. No need to turn in

Solution will be posted on 12/03, W